Ultra-low threshold field emission from amorphous BN nanofilms

作者：Li, Ya-Nan; Wang, Ru-Zhi^*; Su, Chao-Hua; Shen, Zhen; Zhang, Yue-Fei; Yan, Hui

来源：Journal of Alloys and Compounds, 2017, 705: 734-739.

DOI：10.1016/j.jallcom.2017.02.187

• PECVD
• BN nanofilm
• Field emission
• Mixed amorphous
• Threshold field

In this work, Field emission (FE) properties of mixed phase amorphous boron nitride (BN) nanofilms prepared by plasma enhanced chemical vapor deposition (PECVD) were thoroughly investigated. The results showed that, for mixed amorphous BN nanofilms with a little cubic boron nitride (c-BN) and wurtzite boron nitride (w-BN) nanocrystalline, the turn on field of the nanofilms is as low as similar to 0.5 V/mu m and the FE current density can reach similar to 12 mA/cm(2) when the electrical field is only 0.75 V/mu m. However, for primary cubic phase nanocrystalline BN films, the FE current density is only 500 mu A/cm(2); at as high as about 2.5 V/mu m. Moreover, the field emission mechanism of the phase amorphous BN nanofilms was further discussed. Field emission enhancement for mixed phase amorphous BN may be originated from electron step-transport in different energy states and multi-channel electron transport in nanocrystalline interface.

• 出版日期2017-5-25
• 单位北京工业大学