An Investigation of Quantum Dot Super Lattice Use in Nonvolatile Memory and Transistors

作者：Mirdha P.^*; Parthasarathy B.; Kondo J.; Chan P. -Y.; Heller E.; Jain F. C.

来源：Journal of Electronic Materials, 2018, 47(2): 1371-1382.

DOI：10.1007/s11664-017-5951-5

• Site-specific self-assembly
• quantum dots
• quantum dot superlattice
• quantum dot nonvolatile memory
• QDG-NVM
• QDG-FET

Site-specific self-assembled colloidal quantum dots (QDs) will deposit in two layers only on p-type substrate to form a QD superlattice (QDSL). The QDSL structure has been integrated into the floating gate of a nonvolatile memory component and has demonstrated promising results in multi-bit storage, ease of fabrication, and memory retention. Additionally, multi-valued logic devices and circuits have been created by using QDSL structures which demonstrated ternary and quaternary logic. With increasing use of site-specific self-assembled QDSLs, fundamental understanding of silicon and germanium QDSL charge storage capability, self-assembly on specific surfaces, uniform distribution, and mini-band formation has to be understood for successful implementation in devices. In this work, we investigate the differences in electron charge storage by building metal-oxide semiconductor (MOS) capacitors and using capacitance and voltage measurements to quantify the storage capabilities. The self-assembly process and distribution density of the QDSL is done by obtaining atomic force microscopy (AFM) results on line samples. Additionally, we present a summary of the theoretical density of states in each of the QDSLs.

• 出版日期2018-2