A bandgap-engineered HgCdTe PB pi n long-wavelength infrared detector

作者：Qiu, W C; Jiang, T^*; Chang, X A

来源：Journal of Applied Physics, 2015, 118(12): 124504.

DOI：10.1063/1.4931661

In this paper, the HgCdTe PB pi n (pi represents p-type absorption layer) long-wavelength infrared detector based on bandgap-engineering is designed and validated by the preliminary experiments. Numerical simulation was applied to calculate the current-voltage (I-V) characteristic and zerobias resistance-area product (R(0)A) for PB pi n detectors and traditional pn photodiodes. The results show that the performance of PB pi n detector was significantly improved compared with that of conventional pn photodiodes. The design of PB pi n barrier structure can essentially reduce the dark current, while significantly improving the responsivity. In addition, when reverse biased, optimized PB pi n device can also suppress Auger processes in the absorption layer under the high temperature up to 215 K. The proposed HgCdTe long wavelength infrared detectors based on vertical PB pi n structure pave the way for development of high performance and high operation temperature infrared sensor applications.

• 出版日期2015-9-28
• 单位中国人民解放军国防科学技术大学