Al0.17Ga0.83N film with middle temperature-intermediate layer grown on trenched sapphire substrate by MOCVD

作者：Sumiyoshi Kazuhide^*; Tsukihara Masashi; Kataoka Ken; Kawamichi Shuichi; Okimoto Tadashi; Nishino Katsushi; Naoi Yoshiki; Sakai Shiro

来源：Journal of Crystal Growth, 2007, 298: 300-304.

DOI：10.1016/j.jcrysgro.2006.10.031

• intermediate layer
• middle temperature
• low press
• metalorganic chemical vapor deposition
• metalorganic vapor phase epitaxy
• three dimensional growth
• aluminum gallium nitride

A technique to grow low-dislocation-density AlGaN films is presented in this paper. The Al0.17Ga0.83N films using middle temperature (MT)-intermediate layer technique grown by metalorganic chemical vapor deposition on c-plane patterned sapphire were confirmed. The AlGaN films have been investigated by means of X-ray diffraction, scanning electron microscopy and transmission electron microscopy techniques. MT-intermediate layer technique can effectively reduce the dislocation density in the AlGaN films.

• 出版日期2007-1