Nonvolatile memory with switching interfacial polar structures of nano Si-in-mesoporous silica

作者：Shieh Jia Min^*; Huang Jung Y; Yu Wen Chien; Huang Jian Da; Wang Yi Chao; Chen Ching Wei; Wang Chao Kei; Huang Wen Hsien; Cho An Thung; Kuo Hao Chung; Dai Bau Tong; Yang Fu Liang; Pan Ci Ling

来源：Applied Physics Letters, 2009, 95(14): 143501.

DOI：10.1063/1.3240888

We show an artificially engineered electret with Si nanocrystals embedded in mesoporous silica for nonvolatile memory. We attribute the polarization to from polar layers lying at the interfaces between one-side bonded Si nanocrystals and mesoporous silica matrix. Under external field, the Si nanocrystals could be displaced in the porechannels causing displaced charge distributions and therefore a field-controllable electric polarization. Nonvolatile memory is demonstrated with a metal-oxide-semiconductor field-effect transistor.

• 出版日期2009-10-5
• 单位清华大学