Density of trap states measured by photon probe into ZnO based thin-film transistors

作者：Lee Kimoon; Ko Gunwoo; Lee Gun Hwan; Han Gi Bok; Sung Myung M; Ha Tae Woo; Kim Jae Hoon; Im Seongil^*

来源：Applied Physics Letters, 2010, 97(8): 082110.

DOI：10.1063/1.3483763

We report on photo-excited trap-charge-collection spectroscopy, contrived to measure the density of deep-level traps near channel/dielectric interface in a working ZnO based thin-film transistor as a function of photon probe energy. Free charges trapped at a certain energy level are liberated by the correspondingly energetic photons and then electrically collected at the source/drain electrodes. During this photo-electric process, the threshold voltage of TFT shifts and its magnitude provides the density-of-state information of charge traps. In the present work, we directly characterized the density-of-state of ZnO based thin-film transistors with polymer-oxide double dielectrics after evaluating their gate stabilities.

• 出版日期2010-8-23