Asymmetric Negative Bias Temperature Instability Degradation of Poly-Si TFTs under Static Stress

作者：Weng, Chi Feng^*; Chang, Ting Chang; Jian, Fu Yen; Chen, Shih Ching; Lu, Jin; Lu, I Ching

来源：Journal of the Electrochemical Society, 2010, 157(1): H22-H26.

DOI：10.1149/1.3244596

This work investigates the asymmetric negative bias temperature instability (NBTI) degradation of poly-Si thin film transistors (TFTs). Electric measurements of normal and reverse modes are employed to analyze degradation of threshold voltage, current, leakage current, and subthreshold swing. The results indicate that a nonuniform vertical electric field at the poly-Si/SiO(2) interface results in an asymmetric NBTI degradation. The trap generation density gradually diminishes from source to drain. This paper also presents energy diagrams to explain the experimental data; these indicate that asymmetric TFT degradation results from the distribution of the trap state induced by an asymmetric NBTI.

• 出版日期2010
• 单位中山大学