Deducing the apparent flat-band position V-afb and the doping level of large area single layer graphene MOS capacitors

作者：Lin H C D^*; Asselberghs I; Vais A; Arutchelvan G; Delabie A; Heyns M; Mocuta A; Radu I; Thean A

来源：Microelectronic Engineering, 2015, 147: 314-317.

DOI：10.1016/j.mee.2015.04.104

• Large area
• CVD graphene
• Frequency dispersion
• Apparent flat-band
• Border traps

A capacitance-voltage (CV) study on large area CVD single layer graphene MOS capacitors has been carried out. The CV features are carefully examined to reveal the electronic origins of the observed frequency and bias dependence. In this study we investigate the frequency dispersion, propose the definition and extraction of the apparent flat-band V-afb, and finally perform the low temperature CV measurement to deduce the doping level of the graphene MOSCAPs.

• 出版日期2015-11-1