摘要

We propose that a hyperlens can be used for photolithography to generate deep subwavelength arbitrary patterns from diffraction-limited masks. Numerical simulation shows that half-pitch resolution down to 20 nm is possible from a mask with 280 nm period at working wavelength 375 nm. We also extend the hyperlens projection concept from cylindrical interfaces to arbitrary interfaces. An example of a flat interface hyperlens is numerically demonstrated for lithography purposes.

  • 出版日期2009-5-18