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摘要
We report the growth of high quality Bi2Se3 thin films on Al2O3 substrates by using chemical vapor deposition. From the atomic force microscope, x-ray diffraction and transmission electron microscope measurements we found that the films are of good crystalline quality, have two distinct domains and can be grown epitaxially on the Al2O3 substrate. Carrier concentration in the sample is found to be 1.1 x 10(19) cm(-3) between T = 2 K to T = 300 K, and electron mobility can reach 954 cm(2)/Vs at T = 2 K. Weak anti-localization effect is observed in the low temperature magneto-transport measurement for the sample which indicates that the thin film has topological surface state.
- 出版日期2016-6
