High mobility field effect transistor of SnOx on glass using HfOx gate oxide

作者：Ju Chanjong; Park Chulkwon; Yang Hyeonseok; Kim Useong; Kim Young Mo; Char Kookrin^*

来源：Current Applied Physics, 2016, 16(3): 300-304.

DOI：10.1016/j.cap.2015.12.015

• Transparent oxide semiconductor
• Field effect transistor
• SnO2(Tin oxide)
• HfO2(Hafnium oxide)
• Oxide electronics

We report on the electrical properties of SnOx thin films made by reactive sputtering of a Sn metal target and the performance of their field effect transistors with HfOx gate insulator on glass substrates. We investigated the electrical properties of SnOx films by controlling the oxygen partial pressure during growth. The mobility of the SnOx films on glass substrates was as high as 20.28 cm(2) V-1 s(-1) after post-deposition annealing at 400 degrees C, while its carrier density was 4.21 x 10(18) cm(-3). Moreover, we fabricated high mobility thin film transistors using polycrystalline SnOx as the channel and the atomic-layer-deposited HfOx as the gate oxide. The field-effect mobility values were 5.01-20.15 cm(2) V-1 s(-1), the I-on/I-off were 10(3)similar to 10(4), and the subthreshold swing were 1.05-1.60 V dec(-1). We discuss the origins for the non-ideal performance and the future direction for improvement.

• 出版日期2016-3