Analysis of temperature-dependent electrical resistivity of ZnO nano-structures

作者：Choudhary K K^*

来源：Journal of Physics and Chemistry of Solids, 2012, 73(3): 460-464.

DOI：10.1016/j.jpcs.2011.11.020

• Nanostructures
• Electrical properties
• Phonons

The temperature-dependent electrical resistivity rho(T) in metallic and semiconducting phase of ZnO nanostructures is theoretically analysed. rho(T) shows semiconducting phase in low temperature regime (140 K < T < 180 K), shows an absolute minimum near 180 K and increases linearly with T at high temperatures (200 K < T < 300 K). The resistivity in metallic phase is estimated within the framework of electron-phonon and electron-electron scattering mechanism. The contributions to the resistivity by inherent acoustic phonons (rho(ac)) as well as high frequency optical phonons (rho(op)) were estimated using Bloch-Gruneisen (BC) model of resistivity. The electron-electron contributions rho(e-e) = BT2 in addition with electron-phonon scattering is also estimated for complete understanding of resistivity in metallic phase. Estimated contribution to resistivity by considering both phonons, i.e., omega(ac) and omega(op) and the zero limited resistivity are added with electron-electron interaction rho(e-e) to obtain the total resistivity. Resistivity in Semiconducting phase is discussed with small polaron conduction (SPC) model. The SPC model consistently retraces the low temperature resistivity behaviour (140 K < T < 180 K). Finally the theoretically calculated resistivity is compared with experimental data which appears favourable with the present analysis in wide temperature range.

• 出版日期2012-3