A Compact Model of Gate-Voltage-Dependent Quantum Effects in Short-Channel Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

作者：Kim Jihyun^*; Sun Wookyung; Park Seunghye; Lim Hyein; Shin Hyungsoon

来源：Journal of Semiconductor Technology and Science, 2011, 11(4): 278-286.

DOI：10.5573/JSTS.2011.11.4.278

• MOSFET
• gate voltage
• quantum effect
• short channel
• surrounding gate
• Poisson

In this paper, we present a compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We based the model on a two-dimensional (2-D) analytical solution of Poisson's equation using cylindrical coordinates. We used the model to investigate the electrostatic potential and current sensitivities of various gate lengths (L-g) and radii (R). Schrodinger's equation was solved analytically for a one-dimensional (1-D) quantum well to include quantum effects in the model. The model takes into account quantum effects in the inversion region of the SG MOSFET using a triangular well. We show that the new model is in excellent agreement with the device simulation results in all regions of operation.

• 出版日期2011-12