Depth-Profiling Study on Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors by X-ray Photoelectron Spectroscopy

作者：Iwamatsu Shinnosuke^*; Takechi Kazushige; Yahagi Toru; Watanabe Yoshiyuki; Tanabe Hiroshi; Kobayashi Seiya

来源：Japanese Journal of Applied Physics, 2013, 52(3).

DOI：10.7567/JJAP.52.03BB03

We performed an X-ray photoelectron spectroscopy (XPS) depth-profiling study on the materials used in amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with Ti and Mo source/drain (S/D) electrodes. The XPS results suggested that there are some differences between the interface regions of Ti/a-IGZO and Mo/a-IGZO for different chemical states of the materials. The chemical states of the back-channel surfaces were also found to be different between the TFTs with Ti and Mo S/D electrodes. In addition, we fabricated indium-gallium-zinc-titanium oxide composite thin films by deposition using multitarget co-sputtering. The electronic structure of these films observed by XPS is similar to that of the Ti/a-IGZO interface region. The fabricated films were found to have a very low resistivity, much lower than that of an a-IGZO film using typical TFT fabrication processes.

• 出版日期2013-3