Using C-60(+) sputtering to improve detection limit of nitrogen in zinc oxide

作者：Zhu Zihua^*; Shutthanandan Vaithiyalingam; Nachimuthu Ponnusamy

来源：Surface and Interface Analysis, 2011, 43(1-2): 661-663.

DOI：10.1002/sia.3414

• depth profiling
• ToF-SIMS
• zinc oxide
• nitrogen
• C-60(+)
• Cs+

C-60(+) sputtering was firstly used to determine depth profile of nitrogen in zinc oxide materials by time-of-flight (ToF) SIMS. Compared to traditional Cs+ sputtering depth profiling, the C-60(+) sputtering provides increase in signal intensity by a factor of over 200 and improves the detection limit by a factor of about 10. In addition, our XPS results show that sputtering zinc oxide materials by 10 keV C-60(+) to very little carbon deposition at the bottom of the sputter crater.

• 出版日期2011-2