High-temperature operation of 1.26 mu m Fabry-Perot laser with InGaAs metamorphic buffer on GaAs substrate

作者:Arai M*; Fujisawa T; Kobayashi W; Nakashima K; Yuda M; Kondo Y
来源:Electronics Letters, 2008, 44(23): 1359-U36.
DOI:10.1049/el:20082657

摘要

A 1.26 mu m ridge waveguide laser diode with an InGaAs metamorphic buffer on a GaAs substrate grown by metal-organic vapour-phase epitaxy has been successfully developed. This laser has achieved the highest operating temperature (173 degrees C) for continuous-wave operation reported for a metamorphic laser.

  • 出版日期2008-11-6