New Unified Analytical Model of Backscattering Coefficient From Low- to High-Field Conditions in Quasi-Ballistic Transport

作者：Martinie Sebastien^*; Munteanu Daniela; Le Carval Gilles; Autran Jean Luc

来源：IEEE Electron Device Letters, 2008, 29(12): 1392-1394.

DOI：10.1109/LED.2008.2007305

• Backscattering coefficient
• ballistic transport
• double-gate (DG) MOSFET
• scattering probabilities

This letter presents a new analytical model of the backscattering coefficient with a unique formulation from low- to high-field conditions and only depending on the form of scattering probabilities. The theoretical development is based on the flux theory and a new definition of scattering probabilities. In this model, the mean free path is given by Monte Carlo simulations. This new expression is further used to investigate the effect of high-field conditions in the quasi-ballistic drain current of the double-gate MOSFET.

• 出版日期2008-12
• 单位中国地震局