Modulating the band structure and sub-bandgap absorption of Co-hyperdoped silicon by co-doping with shallow-level elements

作者：Dong, Xiao^*; Fang, Xiuxiu; Wang, Yongyong; Song, Xiaohui; Lu, Zhansheng

来源：Applied Physics Express, 2018, 11(6): 061301.

DOI：10.7567/APEX.11.061301

• SOLAR-CELLS
• EFFICIENCY

Hyperdoped group-III elements can lower the Fermi energy in the band structures of Co-hyperdoped silicon. When the Co-to-X (X = B, Al, Ga) ratio is 2 : 1, the intermediate band (IB) in the bandgap includes the Fermi energy and is partially filled by electrons, which is in accordance with the requirement of an IB material. The hyperdoped X atoms can cause the blueshift of the sub-bandgap absorption of the compound compared with the material with no shallow-level elements, which is due to the enlargement of the electronic excitation energy of the Co, X-co-doped silicon.

• 出版日期2018-6
• 单位河南师范大学