A novel high-isolation RF-SOI switch for 2.4 GHz multi-standard applications

作者：Chen, Lei^*; Zhang, Runxi; Shi, Chunqi; Ruan, Ying; Su, Jie; Zhang, Shulin; Lai, Zongsheng

来源：Analog Integrated Circuits and Signal Processing, 2011, 67(2): 143-148.

DOI：10.1007/s10470-010-9588-z

• PD-SOI
• Switch
• Isolation
• Multi-standard

Taking advantage of 1 K Omega center dot cm high-resistivity substrate and special device structure, a novel stack-by-two Single-pole-double-throw (SPDT) switch is fabricated in 0.18 mu m partially depleted silicon-on-insulator technology for power handling capability and linearity improvement, targeting 2.4 GHz multi-standard transceiver application. The measured insertion loss is -1.1 dB at 2.4 GHz. With stacked switching device, the circuit exhibits a high measured input input-referred 1 dB power compression point (IP1 dB) of 21.5 dBm, which has more than 7 dB enhancement compared to previous work. The measured isolation is 43 dB. The switch has a overall occupied die area of 1200 x 560 mu m(2).

• 出版日期2011-5
• 单位华东师范大学