Analysis. on pressure dependence of microcrystalline silicon by optical emission spectroscopy

作者：Wu, Zhimeng^*; Sun, Jian; Lei, Qingsong; Zhao, Ying; Geng, Xinhua; Xi, Jianping

来源：Physica E: Low-Dimensional Systems and Nanostructures , 2006, 33(1): 125-129.

DOI：10.1016/j.physe.2005.12.165

• microcrystalline silicon
• VHF-PECVD
• optical emission spectroscopy
• Raman spectroscopy

Hydrogenated microcrystalline silicon films were prepared by very high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) at 180 degrees C. The optical emission spectroscopy (OES) was used to monitor the plasma during the deposition process. When the pressure was enhanced from 50 to 80 Pa, the intensities of SiH*, H-alpha* and H-beta* increase at first and then decrease for the pressures higher than 80 Pa. The transition from microcrystalline to amorphous phase occurs when increasing the pressure at silane concentration of 5%. It was found that the intensity ratio of IH alphaI-SiH* affects the growth of microcrystalline silicon. With the increase of I-H alphaI-SiH* the crystallnity of films was improved. There are no direct relations between the SiH* intensity and the deposition rate. The deposition rate and dark conductivity are also discussed.

• 出版日期2006-6
• 单位南开大学; 上海交通大学