科研之友
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摘要
This paper reports the high-temperature-dependent electrical behavior of a 2D multilayer MoS2 transistor. The existence of a big Schottky barrier at the MoS2-Ti junction can reduce carrier transport and lead to a lower transistor conductance. At a high temperature (380 K), the field-effect mobility of the multilayer MoS2 transistor increases to 16.9 cm(2) V-1 sec(-1), which is 2 times higher than the value at room temperature. These results demonstrate that at high temperature, carrier transport in a MoS2 with a high Schottky barrier is mainly affected by thermionic emission over the energy barrier.
- 出版日期2014-4
