Step-flow growth of homoepitaxial ZnO thin layers by halide vapor phase epitaxy using ZnCl2 and H2O source gases

作者：Masuda Rui^*; Fujii Tetsuo; Yoshii Naoki; Kumagai Yoshinao; Koukitu Akinori

来源：Journal of Crystal Growth, 2010, 312(16-17): 2324-2327.

DOI：10.1016/j.jcrysgro.2010.05.005

• Atomic force microscopy
• Vapor phase epitaxy
• Oxides
• Zinc compounds
• Semiconducting II-VI materials

The surface morphology of homoepitaxial (0 0 0 1)ZnO thin layers grown by halide vapor phase epitaxy (HVPE) using ZnCl2 and H2O source gases was investigated. Atomic force microscopy (AFM) observations showed that high temperature growth at 1000 degrees C with a low input H2O/ZnCl2 (VI/II) partial pressure ratio of 20 strongly promoted step-flow growth. X-ray diffraction (XRD) analyses revealed the crystalline quality of the homoepitaxial ZnO layer grown at 1000 degrees C with input VI/II ratio of 20 is comparable to that of bulk ZnO substrates. Under a constant input partial pressure of ZnCl2, the growth rate of ZnO is constant within the temperature range 700-900 degrees C, and the growth rate decreases above 900 degrees C due to the shift of thermodynamic equilibrium of the growth reaction.

• 出版日期2010-8-1