An N-2-compatible Ni-0 Metal-Organic Chemical Vapor Deposition (MOCVD) Precursor

作者：Viet Ha Tran; Yatabe Takeshi; Matsumoto Takahiro; Nakai Hidetaka; Suzuki Kazuharu; Enomoto Takao; Ogo Seiji^*

来源：Chemistry Letters, 2015, 44(6): 794-796.

DOI：10.1246/cl.150155

We report the first example of a Ni-0 precursor that provides a contamination-free (<1%) nickel film by metal-organic chemical vapor deposition (MOCVD) using N-2 as the carrier gas. The structure and physical properties of the Ni-0 precursor and subsequent film are described.

• 出版日期2015-6-5