Micro-Raman characterization of Ge diffusion and Si stress change in thin epitaxial Si1-xGex layers on Si(100) after rapid thermal annealing

作者：Chang Chun Wei; Hong Min Hao; Lee Wei Fan; Lee Kuan Ching; Tseng Li De; Chen Yi Hann; Chuang Yen; Fan Yu Ta; Ueda Takeshi; Ishigaki Toshikazu; Kang Kitaek; Yoo Woo Sik^*

来源：Journal of Materials Research, 2012, 27(9): 1314-1323.

DOI：10.1557/jmr.2012.88

Boron-doped, single (similar to 54 nm) or double (similar to 21 + 54 nm) Si1-xGex layers were epitaxially grown on 300-mm-diameter p -Si(100) device wafers with 20 nm technology node design features, by ultrahigh vacuum chemical vapor deposition. The Si1-xGex/Si wafers were annealed in the temperature range of 950-1050 degrees C for 60 s to investigate the effect of annealing on possible changes of Ge content and Si stress near the Si1-xGex/Si interface. High spectral resolution, micro-Raman spectroscopy was used as a nondestructive characterization technique with five excitation wavelengths of 363.8, 441.6, 457.9, 488.0, and 514.5 nm. Ge diffusion and generation of compressive stress at the Si1-xGex/Si interface were measured on all annealed wafers. Ge diffusion and the accumulation of compressive Si stress after annealing showed significantly different behaviors between single-and double-layer Si1-xGex/Si wafers. Raman characterization results were compared with secondary ion mass spectroscopy and high-resolution x-ray diffraction results.

• 出版日期2012-5