Anisotropic pattern transfer in SnO2 thin films for the fabrication of nanostructure-based gas sensors

作者：Park Jong Cheon; Hwang Sungu; Kim Jong Man; Kim Jin Kon; Lee Woon Young; Park Jin Seong; Kim Eun Hee; Jung Yeon Gil; Shim Kwang Bo; Cho Hyun^*

来源：Journal of Ceramic Processing Research, 2009, 10(6): 827-831.

• Tin oxide
• inductively coupled plasma etching
• anisotropic pattern transfer
• BCl3/Ar
• CF4/Ar
• nanostructure-based SnO2 gas sensors

It is important to develop an anisotropic etch process for the fabrication of highly-aligned nanostructure-based SnO2 gas sensors by a top-down approach. In this study, anisotropic pattern transfer was performed into SnO2 films in BCl3/Ar and CF4/Ar inductively coupled plasma discharges. Both chemistries produced practical and controllable etch rates Of SnO2, with maximum etch rates similar to 1850 angstrom/minute for BCl3/Ar and similar to 1400 angstrom/minute for CF4/Ar mixtures were obtained. Etch selectivities in the range of 1-5 were obtained for SnO2 over an Al mask layer in the CF4/Ar mixtures. The etched SnO2 films showed smooth surface morphologies and a vertical sidewall profile was acquired. The BCl3/Ar and CF4/Ar ICP etching was found to be very applicable to the fabrication Of one-dimensional nanostructure-based SnO2 gas sensors.

• 出版日期2009-12