A new precursor for metal organic chemical vapor deposition of iridium thin films

作者：Yan Xin^*; Zhang Qiuyu; Fan Xiaodong

来源：Rare Metal Materials and Engineering, 2006, 35(7): 1129-1131.

• precursor
• iridium film
• MOCVD

A new precursor Ir(thd)(3) was synthesized from iridium salts solution and Hthd. The structure of Ir(thd)(3) was characterized by element analysis, infrared spectroscopy, and HNMR spectroscopy. The results of TG showed that the precursor was completely volatile near 290 degrees C. The Iridiurn films were prepared from the synthesized precursor by MOCVD. The structure and morphology of iridium films were studied by XRD and AFM. The results showed that the iridium films were successfully prepared and the surface of films was continuous and compact.

• 出版日期2006-7
• 单位西北工业大学