A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

作者：Tapajna M^*; Kuzmik J

来源：Applied Physics Letters, 2012, 100(11): 113509.

DOI：10.1063/1.3694768

An analytical model for threshold voltage calculation for metal-oxide-semiconductor GaN based high electron mobility transistors is proposed. This model includes polarization induced charges at each heterostructure interface/surface, surface donors, oxide/barrier interface traps charge, and interfacial and bulk fixed oxide charge. Applicability of the model is demonstrated on GaN/AlGaN/GaN MOS heterostructure capacitors with Al2O3 and HfO2 gate dielectrics grown by atomic layer deposition with different barrier surface treatment and Al2O3 thicknesse.

• 出版日期2012-3-12
• 单位中国科学院电工研究所