摘要

In this article a 05 V X band low noise amplifier (LNA) composed of two common source stages is designed and fabricated with 0 18 mu m CMOS technology Based on the structure of cascaded common source stages and foment! body bias technology the supply voltage is reduced Measurement results show that the circuit can operate at supply voltage of 05 V 14 with 8 mA current occupation The gain is 91 dB noise figure is 5 0 dB and IIP3 is 85 dBm at frequency of 8 9 GHz The whole performance of the amplifier defined by two kinds of