摘要
We present details of the homo-epitaxial growth of Yb:YAG onto a < 100 > oriented YAG substrate by pulsed laser deposition. Material characterization and initial laser experiments are also reported, including the demonstration of laser action from the 15 mu m-thick planar waveguide generating 11.5 W of output power with a slope efficiency of 48%. This work indicates that under appropriate conditions, high-quality single-crystal Yb: YAG growth via pulsed laser deposition is achievable with characteristics comparable to those obtained via conventional crystal growth techniques.
- 出版日期2016-1-1