Development and test of double-sided silicon strip detector

作者：Sun Li-Jie; Lin Cheng-Jian; Yang Feng; Guo Zhao-Qiao; Guo Tian-Shu; Xu Xin-Xing; Bao Peng-Fei; Yang Lei; Jia Hui-Ming; Ma Nan-Ru; Zhang Huan-Qiao; Liu Zu-Hua; Xia Qing-Liang

来源：Atomic Energy Science and Technology, 2015, 49(2): 336-342.

DOI：10.7538/yzk.2015.49.02.0336

• Detection performance
• Double-sided silicon strip detectors
• Electronic performance
• Energy resolutions
• Full depletion
• Microelectronic techniques
• Oxide separation
• Reverse leakage current

The double-sided silicon strip detector (DSSD) was developed. The detector's sensitive area is 48 mm×48 mm and the thickness is about 300 μm. Both of two sides surfaces are divided into equal 48 strips with width of 0.9 mm by oxide separation of 0.1mm. The electronic performance (full depletion bias voltage, reverse leakage current and interstrip resistance) and detection performance (rise time, energy resolution and crosstalk) were tested. The reverse leakage current of each strip is less than 10 nA, and the rise time of preamplifiers for 5.157 MeV αparticles is about 45 ns under bias voltage of -15 V. The junction side strips display an energy resolution of 0.6%-0.7% whereas the ohmic side strips show an unsatisfactory resolution. The crosstalk between neighboring strips is negligible on the junction side but interferes with each strip on the ohmic side.

• 出版日期2015