Homoepitaxial growth of a-plane GaN layers by reaction between Ga2O vapor and NH3 gas

作者：Sumi Tomoaki^*; Taniyama Yuuki; Takatsu Hiroaki; Juta Masami; Kitamoto Akira; Imade Mamoru; Yoshimura Masashi; Isemura Masashi; Mori Yusuke

来源：Japanese Journal of Applied Physics, 2015, 54(6): 065501.

DOI：10.7567/JJAP.54.065501

Growth of high-quality a-plane GaN layers was performed by reaction between Ga2O vapor and NH3 gas at a high temperature. Smooth a-plane GaN epitaxial layers were obtained on a-plane GaN seed substrates sliced from thick c-plane GaN crystals. Growth rate increased with increasing Ga2O partial pressure. An a-plane GaN layer with a growth rate of 48 mu m/h was obtained. The X-ray rocking curve (XRC) measurement showed that the full widths at half maximum (FWHMs) of GaN(11 (2) over bar0) with the incident beam parallel and perpendicular to the [0001] direction were 29-43 and 29-42 arcsec, respectively. Secondary ion mass spectrometry (SIMS) measurement revealed that oxygen concentration decreased at a high temperature. These results suggest that growth of a-GaN layers using Ga2O vapor and NH3 gas at a high temperature enables the generation of high-quality crystals.

• 出版日期2015-6