科研之友
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摘要
In this work, a compact subthreshold model for fully depleted nanoscale short channel nanowire MOSFETs is proposed. It is based on an approximated solution of two-dimensional Poisson's Equation in cylindrical coordinate system. It matches well with technology computer-aided design simulation results in a wide range variation of design parameters without introducing any empirical fitting parameters.
- 出版日期2015-4
- 单位沈阳工业大学
