Material engineering of GexTe100-x compounds to improve phase-change memory performances

作者：Navarro G^*; Sousa V; Persico A; Pashkov N; Toffoli A; Bastien J C; Perniola L; Maitrejean S; Roule A; Zuliani P; Annunziata R; De Salvo B

来源：Solid-State Electronics, 2013, 89: 93-100.

DOI：10.1016/j.sse.2013.07.005

• Phase-Change Memory (PCM)
• Germanium Telluride (GeTe)
• Ge-rich
• Te-rich

In this paper we provide a detailed physical and electrical characterization of Germanium Telluride compounds (GexTe100-x) targeting phase-change memory applications. Thin films of Germanium-rich as well as Tellurium-rich phase-change materials are deposited for material analysis (XRD, resistivity and optical characterization). GexTe100-x compounds are then integrated in lance-type analytical phase-change memory devices allowing for a thorough analysis of the switching characteristics, data retention and endurance performances. Tellurium-rich GeTe alloys exhibit stable programming characteristics and can sustain endurance up to 10(7) cycles, while Germanium-rich compounds show an unstable RESET state during repeated write/erase cycles, probably affected by Ge segregation. Finally we demonstrate that data retention is strongly improved departing from Ge50Te50 stoichiometric composition.

• 出版日期2013-11
• 单位中国地震局