Memory diodes with nonzero crossing

作者：Saraf Shimon; Markovich Miri; Vincent Tracey; Rechter Roman; Rothschild Avner^*

来源：Applied Physics Letters, 2013, 102(2): 022902.

DOI：10.1063/1.4775673

Memristors combine switching, memory, and rectification functions in two-terminal nanoelectronic devices. The theory says that their current-voltage (I-V) characteristics cross over at the zero crossing point (I = V = 0), and the results reported hitherto conform to this theorem. Here, we extend the family of memristive devices, adding memory diodes (memdiodes) comprising SrTiO3 pn junctions that display unique combination of rectification, hysteresis, and nonzero crossing. Reverse bias polarization gives rise to a nonzero open circuit voltage that persists after the junction is disconnected from the external circuit. This opens up an opportunity for a new type of nonvolatile memories.

• 出版日期2013-1-14