摘要

Nuclear batteries based on silicon carbide betavoltaic cells have been studied extensively in the literature. This paper describes an analysis of design parameters, which can be applied to a variety of materials, but is specific to silicon carbide. In order to optimize the interface between a beta source and silicon carbide p-n junction, it is important to account for the specific isotope, angular distribution of the beta particles from the source, the energy distribution of the source as well as the geometrical aspects of the interface between the source and the transducer. In this work, both the angular distribution and energy distribution of the beta particles are modeled using a thin planar beta source (e.g., H-3, Ni-63, S-35, Pm-147, Sr-90, and Y-90) with GEANT4. Previous studies of betavoltaics with various source isotopes have shown that Monte Carlo based codes such as MCNPX, GEANT4 and Penelope generate similar results. GEANT4 is chosen because it has important strengths for the treatment of electron energies below one keV and it is widely available. The model demonstrates the effects of angular distribution, the maximum energy of the beta particle and energy distribution of the beta source on the betavoltaic and it is useful in determining the spatial profile of the power deposition in the cell.

  • 出版日期2017-9