Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell

作者：Tan K H^*; Wicaksono S; Loke W K; Li D; Yoon S F; Fitzgerald E A; Ringel S A; Harris J S Jr

来源：Journal of Crystal Growth, 2011, 335(1): 66-69.

DOI：10.1016/j.jcrysgro.2011.09.023

• Molecular beam epitaxy
• Nitrides
• Solar cells

We report the performance of a 1 eV GaNAsSb-based photovoltaic cell grown using a molecular beam epitaxy system equipped with a radio frequency (RF) plasma-assisted nitrogen source. The 1 mu m-thick photoabsorption layer contains 2% of N and 6% of Sb resulting in a GaNAsSb layer with bandgap energy of 1.0 eV. Under AM1.5G solar illumination condition with and without 850 nm long pass filter, the GaNAsSb-based photovoltaic cell demonstrates a J(sc) values of 15 and 32 mA/W, respectively. Deep level transient spectroscopy analysis reveals that the V(oc) of the photovoltaic cell could possibly be limited by the presence of arsenic antisite defects.

• 出版日期2011-11-15
• 单位南阳理工学院