科研之友
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摘要
This article presents a novel application of the active inductor in the design of the low-noise amplifier (LNA). To reduce the silicon area consumed by the LNA without sacrificing its linearity, the passive source-degenerated inductor in the conventional design is replaced with the active inductor. The LNA is fabricated with a standard 0.18-mu m CMOS process. Compared with previous arts, this LNA exhibits good figure of merit based on its total power consumption of 19 mW measured power gain of 17 dB, input third-order intercept point of -7 dBm, and noise figure of 3.4 dB at 5.7 GHz.
- 出版日期2009-8
- 单位中国科学院电工研究所; 清华大学
