SOI monolithic pixel detector

作者：Miyoshi T^*; Ahmed M I; Arai Y; Fujita Y; Ikemoto Y; Takeda A; Tauchi K

来源：Journal of Instrumentation, 2014, 9(05): C05044.

DOI：10.1088/1748-0221/9/05/C05044

• Solid state detectors
• X-ray detectors
• Inspection with x-rays
• X-ray radiography and digital radiography (DR)

We are developing monolithic pixel detector using fully-depleted (FD) silicon-on-insulator (SOI) pixel process technology. The SOI substrate is high resistivity silicon with p-n junctions and another layer is a low resistivity silicon for SOI-CMOS circuitry. Tungsten vias are used for the connection between two silicons. Since flip-chip bump bonding process is not used, high sensor gain in a small pixel area can be obtained. In 2010 and 2011, high-resolution integration-type SOI pixel sensors, DIPIX and INTPIX5, have been developed. The characterizations by evaluating pixel-to-pixel crosstalk, quantum efficiency (QE), dark noise, and energy resolution were done. A phase-contrast imaging was demonstrated using the INTPIX5 pixel sensor for an X-ray application. The current issues and future prospect are also discussed.

• 出版日期2014-5