Annealing effects on InGaAsN/GaAs quantum wells analyzed using thermally detected optical absorption and ten band k-p calculations

作者：Bouragba T^*; Mihailovic M; Reveret F; Disseix P; Leymarie J; Vasson A; Damilano B; Hugues M; Massies J; Duboz J Y

来源：Journal of Applied Physics, 2007, 101(7): 073510.

DOI：10.1063/1.2719289

The effects of thermal annealing for In0.25Ga0.75As1-yNy/GaAs multiquantum wells (MQWs) have been investigated through thermally detected optical absorption. The QW transition energies have been calculated by using a ten-band k-p model including the band anticrossing model for the description of the InGaAsN band gap variation. The modification of the In concentration profile due to In-Ga interdiffusion during thermal annealing is taken into account through the Fick law. A good agreement is obtained between calculated and experimental energies of optical transitions. Our results show that the In-Ga interdiffusion phenomenon observed in a nitrogen free sample is moderately enhanced by the introduction of nitrogen. The blueshift of optical transitions induced by the annealing process is the result of both In-Ga interdiffusion and rearrangement of local nitrogen environment.

• 出版日期2007-4-1