DC similar to 10.5 GHz complimentary metal oxide semiconductor distributed amplifier with RC gate terminal network for ultra-wideband pulse radio systems

作者：Chang J F^*; Lin Y S

来源：IET Microwaves Antennas & Propagation, 2012, 6(2): 127-134.

DOI：10.1049/iet-map.2011.0231

A DC similar to 10.5 GHz complimentary metal oxide semiconductor (CMOS) distributed amplifier (DA) with flat and low noise figure (NF), flat and high power gain (S-21) and small group delay (GD) variation for ultra-wideband (UWB) pulse radio systems using standard 0.18 mu m CMOS technology is demonstrated. Flat and low NF was achieved by adopting the proposed resistor capacitor (RC) terminal network with 140 Omega terminal resistance over the frequency band of interest (instead of the traditional 50 Omega terminal resistance or the recently proposed resistor inductor (RL) terminal network) for the gate transmission line. Besides, flat and high S-21 was achieved by using cascoded transistors as the gain cell. Over the DC similar to 10.5 GHz band, the DA consumed 29.16 mW and achieved flat and high vertical bar S-21 vertical bar of 10.5 +/- 1.4 dB, flat and low NF of 3.2 +/- 0.3 dB and excellent phase linearity (the GD variation was only +/- 13.8 ps), one of the best NF and phase linearity results ever reported for a CMOS DA or wideband low-noise amplifier (LNA) with bandwidth greater than 7.5 GHz.

• 出版日期2012-1-31