Ambipolar Barristors for Reconfigurable Logic Circuits

作者：Liu Yuan; Zhang Guo; Zhou Hailong; Li Zheng; Cheng Rui; Xu Yang; Gambin Vincent; Huang Yu; Duan Xiangfeng

来源：Nano Letters, 2017, 17(3): 1448-1454.

DOI：10.1021/acs.nanolett.6b04417

• Vertical transistor
• van der Waals heterostructure
• tunable diode
• ambipolar
• graphene weak screening

Vertical heterostructures based on graphene have emerged as a unique architecture for novel electronic devices with unusual characteristics. Here we report a new design of vertical ambipolar barristors based on metal graphene silicon graphene sandwich structure, using the bottom graphene as a gate-tunable "active contact", the top graphene as an adaptable Ohmic contact, and the low doping thin silicon layer as the switchable channel. Importantly, with finite density of states and weak screening effect of graphene, we demonstrate, for the first time, that both the carrier concentration and majority carrier type in the sandwiched silicon can be readily modulated by gate potential penetrating through graphene. It can thus enable a new type of ambipolar barristors with an ON-OFF ratio exceeding 10(3). Significantly, these ambipolar barristors can be flexibly configured into either p-type or n-type transistors and used to create integrated circuits with reconfigurable logic functions. This unconventional device structure and ambipolar reconfigurable characteristics can open up exciting opportunities in future electronics based on graphene or two-dimensional van der Waals heterostructures.

• 出版日期2017-3