A 4H-SiC junction barrier Schottky diode with segregated floating trench and super junction

作者：Wu, Lijuan^*; Lei, Bing; Yang, Hang; Song, Yue; Zhang, Yinyan

来源：Superlattices and Microstructures, 2018, 123: 201-209.

DOI：10.1016/j.spmi.2018.07.030

• MOSFET

A 4H-SiC Junction Barrier Schottky Diode with Segregated Floating Trench and Super Junction (S-FT SJ JBS) is presented in this paper. By adopting segregated integrated trench and super junction, the high electric field not only focus on the bottom of trench but also gathers in the top of trench and the edge of super junction, therefore the distributions of the high electric field is more uniform, and thus to substantially improve the breakdown voltage (BV). By using the floating trench, the area of schottky contact is enlarged, thus the density of current is increased in the on state, and the specific on-resistance (R-on,R-sp) of the device is ultimately decreased. The results of simulation show that the BV and R-on,R-sp of S-FT SJ JBS diode are 1891V and 0.16 m Omega cm(2), and the BV is improved by 29.5% and the R-on,R-sp is decreased by 50% compared with I-FT SJ JBS diode. The Baliga figure-of-merit (BFOM) of S-FT SJ JBS diode is 894 W-cm(-2) which is increased by 236.1% compared with I-FT SJ JBS diode.

• 出版日期2018-11
• 单位长沙理工大学