AN AlGaAs/GaAs-BASED PLANAR GUNN DIODE OSCILLATOR WITH A FUNDAMENTAL FREQUENCY OPERATION OF 120 GHZ

作者：Maricar, Mohamed Ismaeel; Glover, James; Khalid, Ata; Li, Chong; Evans, Gwynne; Cumming, David S. R.; Oxley, Christopher H.^*

来源：Microwave and Optical Technology Letters, 2014, 56(10): 2449-2451.

DOI：10.1002/mop.28606

• planar Gunn diode
• series inductor
• oscillation frequency
• power
• coplanar waveguide
• GaAs substrate

This letter reports the highest fundamental oscillator operating frequency of 120 GHz for gallium arsenide (GaAs)-based Gunn diode. The letter describes the design, fabrication, and test of the aluminum gallium arsenide (AlGaAs)/(GaAs) planar Gunn diode with an anode to cathode separation of 1 mu m and channel width of 120 mu m. The planar Gunn diode was designed with an integrated series inductor in coplanar waveguide format. The experimental results showed that the planar Gunn diode oscillated at a fundamental frequency of 120.47 GHz with an RF output power -9.14 dBm. This is highest fundamental frequency and power recorded for a GaAs-based Gunn diode.

• 出版日期2014-10