Near infrared organic light emitting devices based on a new erbium(III)beta-diketonate complex: synthesis and optoelectronic investigations

作者:Ahmed Zubair*; Aderne Rian E; Kai Jiang; Resende Jackson A L C; Padilla Chavarria Helmut I; Cremona Marco*
来源:RSC Advances, 2017, 7(30): 18239-18251.
DOI:10.1039/c6ra27473k

摘要

An in situ reaction of two optoelectronically active organic ligands (anionic thenoyltrifluoroacetylacetone, tta(-), and neutral triphenylphosphine oxide, tppo) with erbium(III) ion in the presence of a base yielded a new erbium complex, [Er(tta)(3)(tppo)]. The solid and solution structure of the complex was established by X-ray crystallography, NMR, ESI-MS, FTIR, TGA and Raman spectroscopy. They indicate that the Er(III) ion is coordinated to seven oxygen atoms of three tta ligands and one tppo ligand in a monocapped octahedral geometry. The Judd-Ofelt parameters of the complex were determined by a least squares fitting and dealt with its chemical structure. On UV excitation through ligand mediation, the complex shows the characteristic near-infrared emission of the corresponding Er(III) ion at 1534 nm. Furthermore, a near infra-red organic light emitting diode (NIR-OLED) was fabricated with structure: ITO/[N,N'-bis( naphthalen-2-yl)-N,N'-bis(phenyl) benzidine]/[Er(tta)(3)(tppo)]/[2,2',2''-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)]/LiF/Al. This device, with maximum applied voltage of 23 V, shows a total quenching of visible emission and electroluminescence in the C-band region (1534 nm) which is suitable for third communication window applications in fiber optics. Finally, an organic diode was fabricated to determine charge carrier mobility of the complex using a steady-state method.

  • 出版日期2017