Decay Processes of Si 2s Core Holes in Si(111)-7 x 7 Revealed by Si Auger Electron Si 2s Photoelectron Coincidence Measurements

作者：Mase Kazuhiko^*; Hiraga Kenta; Arae Sadanori; Kanemura Rui; Takano Yusaku; Yanase Kotaro; Ogashiwa Yosuke; Shohata Nariaki; Kanayama Noritsugu; Kakiuchi Takuhiro; Ohno Shinya; Sekiba Daiichiro; Okudaira Koji K; Okusawa Makoto; Tanaka Masatoshi

来源：Journal of the Physical Society of Japan, 2014, 83(9): 094704.

DOI：10.7566/JPSJ.83.094704

Decay processes of Si 2s core holes in a clean Si(111)-7 x 7 surface are investigated using coincidence measurements of Si Auger electrons and Si 2s photoelectrons at a photon energy of 180 eV. We show that Si 2s core holes exhibit two nonradiative decay processes: the first being a Si L1L23V Coster-Kronig transition followed by delocalization of the valence hole and Si L23VV Auger decay, and the second being Si L1VV Auger decay. The branching ratio of the Si L1L23V Coster-Kronig transition to the Si L1VV Auger decay is estimated to be 96.7% +/- 0.4% to 3.2% +/- 0.4%.

• 出版日期2014-9