All-Quantum-Dot Infrared Light-Emitting Diodes

作者：Yang Zhenyu; Voznyy Oleksandr; Liu Mengxia; Yuan Mingjian; Ip Alexander H; Ahmed Osman S; Levina Larissa; Kinge Sachin; Hoogland Sjoerd; Sargent Edward H^*

来源：ACS Nano, 2015, 9(12): 12327-12333.

DOI：10.1021/acsnano.5b05617

• colloidal quantum dots
• light-emitting diodes
• infrared light emission
• carrier transport layers

Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport layers built using organic materials and inorganic oxides. Herein, we report the infrared LEDs that use quantum-tuned materials for each of the hole-transporting, the electron-transporting, and the light-emitting layers. We successfully tailor the bandgap and band position of each CQD-based component to produce electroluminescent devices that exhibit emission that we tune from 1220 to 1622 nm. Devices emitting at 1350 nm achieve peak external quantum efficiency up to 1.6% with a low turn-on voltage of 1.2 V, surpassing previously reported all-inorganic CQD LEDs.

• 出版日期2015-12