Ab initio calculation of relative permittivity of La-doped HfO2

作者：Ong T M^*; Xu S

来源：Physica B: Condensed Matter , 2014, 454: 184-188.

DOI：10.1016/j.physb.2014.07.074

• Hafnium oxide
• Lanthanum
• Berry phase

First principles calculations of HfO2 and La-doped HfO2 structures were carried out to investigate the effect of La doping on the relative permittivity of HfO2 films. In this study 6.25% of La was incorporated into HfO2. Upon examination, we found out that La addition increased the value of the relative permittivity from 19 to 26 and this was because the La-induced distortion increased the range of frequencies that contribute to the lR-active modes.

• 出版日期2014-12-1
• 单位南阳理工学院