Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)

作者：Ambrogio, Stefano^*; Milo, Valerio; Wang, ZhongQiang; Balatti, Simone; Ielmini, Daniele

来源：IEEE Electron Device Letters, 2016, 37(10): 1268-1271.

DOI：10.1109/LED.2016.2600574

• Resistive switching memory
• RRAM
• capacitive overshoot
• reliability
• analytical modeling
• non volatile memory

Current overshoot due to parasitic capacitance during set transition represents a major concern for controlling the resistance and current consumption in resistive switching memory (RRAM) arrays. In this letter, the impact of current overshoot on the low-resistance state (LRS) is evaluated by means of experiments on one-transistor/one-resistor structures of HfO2 RRAM. We develop a physics-based analytical model, able to calculate the LRS resistance and the corresponding reset current by a closed-form formula. The model allows predicting the current overshoot impact for any value of compliance current, set voltage, and parasitic capacitance.

• 出版日期2016-10