Ab initio electronic band structure calculation of InP in the wurtzite phase

作者：Dacal Luis C O; Cantarero Andres^*

来源：Solid State Communications, 2011, 151(10): 781-784.

DOI：10.1016/j.ssc.2011.03.003

• Semiconductor
• InP wurtzite
• Electronic band structure

We present ab initio calculations of the InP band structure in the wurtzite phase and compare it with that of the zincblende phase. In both calculations, we use the full potential linearized augmented plane wave method as implemented in the WIEN2k code and the modified Becke-Johnson exchange potential, which provides an improved value of the bandgap. The structural optimization of the wurtizte InP gives a = 0.4150 nm, c = 0.6912 nm, and an internal parameter u = 0.371, showing the existence of a spontaneous polarization along the growth axis. As compared to the ideal wurtzite structure (that with the lattice parameter derived from the zincblende structure calculations), the actual wurtzite structure is compressed (-1.3%) in plane and expanded (0.7%) along the c-direction. The value of the calculated band gaps agrees well with recent optical experiments. The calculations are also consistent with the optical transitions found using polarized light.

• 出版日期2011-5