A Study of the Electrical and Galvanomagnetic Properties of InSb Films

作者：Bae Chang Hwan; Lee Ju Hee; Han Chang Suk^*

来源：Journal of the Korean Institute of Metals and Materials, 2010, 48(4): 353-356.

DOI：10.3365/KJMM.2010.48.04.353

• thin film
• vapor deposition
• magnetic properties
• X-ray diffraction
• magnetoresistance

InSb thin films with a thickness of approximately 300 nm were prepared using single- and double-source vacuum evaporation methods and their structures and properties were investigated in terms of a heat treatment procedure. The double-source InSb films, prepared by the alternate stacking of In and Sb, were polycrystalline in structure and included small amounts of unreacted In and Sb phases. After annealing at elevated temperatures below the melting point of InSb (525 degrees C), the films changed into the InSb phase and were found to contain small amounts of unreacted In. The formation capability of the InSb compound was slightly lower for multilayer films than for single-layer films. The electrical and galvanomagnetic properties were found to be strongly related to the microstructures of the films. The maximum value of the Hall mobility and the magnetoresistance were determined to be 4.3x10(3)cm(2)/Vs and 70%, respectively, for the single-layer films, while these values for the alternately stacked films were respectively 2.9x10(3) cm(2)/Vs and 29% for the [Sb(2.5)/In(2.5)](60) films, and 3.1x10(3) cm(2)/Vs and 10% for the [Sb(150)/In(150)](1) films.

• 出版日期2010-4